RESUMO
Nickel nanostructures have found widespread application as both functional components, e.g. in magnetic systems, and as part of the lithographic pattern transfer process as etch masks, EUV mask absorbers, and imprint templates. Electron-beam induced etching of nickel is highly desirable for the repair and editing of masks and templates with high resolution and without substrate damage. However, there are no known gas-phase reactants that produce volatile nickel products under e-beam irradiation. Here we report the successful local etching of nickel by a focused electron beam in an environmental scanning electron microscope using a liquid reactant, aqueous sulfuric acid. Sulfuric acid did not spontaneously etch nickel under ESEM conditions, but nickel was etched in areas exposed to the electron beam. Etching parameters such as dose, refresh time, and addition of a surfactant were investigated. The extent of the etch increases with dose before terminating at sub-micron feature sizes. The etch resolution improves with the addition of surfactant. This approach enables local nickel patterning with complete film removal but without damaging underlying layers. With further refinement, the process may enable nickel absorber repair and editing and remove a significant obstacle to the use of nickel in EUV lithography.
